Compound semiconductor devices
Master
In Maynard (USA)
Description
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Type
Master
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Location
Maynard (USA)
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Start date
Different dates available
This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.
Facilities
Location
Start date
Start date
Reviews
Course programme
Lectures: 2 sessions / week, 1.5 hours / session
Recitations: 1 session / week, 1 hour / session
6.720J, 6.728
There is no text for the subject. Reading material, assignments, and references will be distributed periodically in class and on the web.
There will be roughly bi-weekly problem sets handed out.
There will be no exams (unless no one appears to be keeping up, in which case there will be a mid-term).
Students will be asked to research a topic of current interest to the compound semiconductor community and to the student, to prepare a 15 minute presentation on their topic, and to also submit a 8 to 10 page term paper on the same topic. Depending on the enrollment and classroom availability, we hope to schedule time when the presentations can be given to the entire class.
Grades will be based on class participation, homework completion, and the final paper.
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Compound semiconductor devices