Radio Frequency Circuits and Devices

Course

In London

£ 1,500 VAT inc.

Description

  • Type

    Course

  • Level

    Intermediate

  • Location

    London

  • Class hours

    150h

  • Duration

    4 Days

This four-day course will give you a good grounding in a range of RF (radio frequency) devices including the fundamentals of device physics, RF circuits, system architectures and noise measurement techniques.
You'll learn about impedance matching, stability and noise figure for amplifier circuit design.
This will be consolidated with a full-day computer simulation exercise where you'll perform RF amplifier design tasks using the industry standard software package Agilent ADS.
The course is run by UCL's Department of Electronic and Electrical Engineering.

Facilities

Location

Start date

London
See map
Gower Street, WC1E 6BT

Start date

On request

About this course

On completion of this course, you should be able to:
demonstrate an advanced understanding of the semiconductor physics underlying the operation of a range of RF devices
draw the band diagrams for a range of semiconductor materials and RF devices and use them to predict and explain the current-voltage characteristics of those devices
apply and solve the Schrodinger’s equation for a simple potential barrier structure, explain the tunnelling phenomenon and determine the device dimensions necessary for the tunnelling to occur
analyse devices with negative differential resistance and design oscillator circuits using the correct load resistance
understand the design, fabrication, packaging, operation and characteristics of a wide range of two terminal RF devices
analyse and design impedance matching circuits with both lumped components and distributed transmission line elements using analytical as well the graphical Smith Chart techniques
evaluate the stability of RF transistors used in amplifier circuits and design corresponding matching networks to ensure stable operation
design matching circuits for achieving either maximum power gain or minimum noise figure using the scattering parameters of transistors
design and evaluate a complete single-transistor amplifier circuit using industry standard simulation package

The department's short courses/CPD modules are aimed at those working in the telecommunications industry such as researchers, engineers, IT professionals and managers.
They're particularly suited to graduates in electronic and electrical engineering, communications engineering and computer science who want to further their knowledge on a particular topic, or work towards a Master's degree.
You don't need to have any pre-requisite qualifications to take this course.

The course runs over four days, followed by a three-hour tutorial, and an optional exam.
A certificate of attendance will be issued on completion for those who take the module but not the exam.
If you take and pass the exam you'll get a certificate stating this, which includes your pass level.

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This centre's achievements

2018

All courses are up to date

The average rating is higher than 3.7

More than 50 reviews in the last 12 months

This centre has featured on Emagister for 14 years

Subjects

  • Design
  • Radio
  • Simulation
  • GCSE Physics
  • Fabrication
  • Fabrication technologies
  • Spectrum
  • RF
  • Applications Server
  • Applications

Course programme

You'll cover the following during this course:

  • Introduction to RF spectrum, applications, devices and fabrication technologies
  • Fabrication of passive elements: inductors, capacitors and resistors
  • Review of key aspects of semiconductor physics: band structure, effective mass and mobility, quantum wells and tunnelling
  • Two-terminal devices: transferred electron devices (Gunn diodes), IMPATT diodes, varactors, PIN diodes, tunnel diodes and quantum tunnel diodes
  • Overview of different transistor technologies for RF/microwave applications
  • Introduction to coaxial, microstrip, coplanar transmission lines and planar filters, two-port networks and the scattering parameters
  • Impedance matching techniques (two-element L network, three-element matching, designing with Smith Chart, transmission-line matching network)
  • Introduction to monolithic microwave integrated circuit (MMIC)
  • RF transistor amplifier design using scattering parameters (constant gain circle and constant noise circle)
  • Stability consideration and techniques for improving stability
  • Introduction to balanced amplifiers and distributed amplifiers
  • Full-day computer simulation exercise using Agilent ADS for RF amplifier design
  • RF transmitters and receivers
  • Noise and noise figure
  • Mixers and modulators
  • Intermodulation and dynamic range
  • Practical measurement of noise figure and intermodulation
  • Amplifier linearisation techniques

Radio Frequency Circuits and Devices

£ 1,500 VAT inc.